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【Microsemi】マイクロセミ社がシリコンカーバイト(SiC)のソリューションを発表。新たなSiC MOSET、SiC ショットキーバリアダイオード(SBD)によって引き続きオートモーティブ、インダストリアルマーケット市場を牽引していきます

マイクロセミ社が次世代の1200V SiC MOSETである 40mOhm MSC040SMA120Bのサンプルを発表いたしました。また、1200V SiC SBDのリリースも発表し、さらなるSiCディスクリート製品、モジュール製品の拡充を図っております。

マイクロセミ社のSiC MOSFET製品ファミリは高いアバランシェ定格を持ち、デバイスの耐久性はインダストリアル、オートモーティブ、商用航空機の電源アプリケーションで実証されており、ショートサーキットの耐久性の高さにより安定動作をご提供できます。新たなデバイスはコマーシャル品、AEC-Q101品質の700V、1200V SiC MOSFEを含み、今後数か月のうちにリリースされ、広範な電源アプリケーションへソリューションを展開して参ります。

SiC MOSFET製品はメディカル、航空宇宙、防衛、データセンター市場におけるスイッチング電源やモーター制御等でご使用できます。たとえばハイブリッド電気自動車、電気自動車のチャージャ、コンダクティブ/インダクティブ方式のオンボード・チャージャ、DC-DCコンバータ、EVパワートレイン/トラクション制御、PVインバータ、モーター・コントロール/アクチュエータ等に適しています。

Microsemi Continues Its Leadership in Silicon Carbide Solutions with New SiC MOSFETs and SiC SBDs Targeted at Industrial and Automotive Markets

New Devices Ideally Suited for Power Applications in Rugged Environments to be Showcased in Booth 1147 at APEC Exhibition March 4-8

ALISO VIEJO, Calif., Feb. 27, 2018 /PRNewswire/ -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced sampling availability of the first product in its next-generation 1200-volt (V) Silicon Carbide (SiC) MOSFETs, the 40 mOhm MSC040SMA120B. The company also announced the release of its complementary 1200 V SiC Schottky barrier diodes (SBDs), further expanding Microsemi's growing SiC discretes and modules portfolios.

The new SiC MOSFET product family is highly avalanche-rated, demonstrating the devices' ruggedness for industrial, automotive and commercial aviation power applications, and offers a high short circuit withstand rating for robust operation. Additional members of the product family will be released in the coming months, including commercially and AEC-Q101 qualified 700 V and 1200 V SiC MOSFET solutions to address a wide range of power applications which can leverage Microsemi's newly released SiC SBDs.

"Our new SiC MOSFET product family provides customers with the benefits of more efficient switching and high reliability, particularly in comparison to Silicon diodes, Silicon MOSFETs and Insulated Gate Bipolar Transistor (IGBT) solutions," said Leon Gross, vice president and business unit manager for Microsemi's Power Discretes and Modules business unit. "Customers focused on developing cost-effective power electronics solutions for rugged environments can select their ideal solutions from these next-generation offerings, with the ability to scale to their specific SiC MOSFET needs."

Microsemi's next-generation SiC MOSFETs and new SiC SBDs are designed with high repetitive unclamped inductive switching (UIS) capability at rated current, with no degradation or failures. The new SiC MOSFETs maintain high UIS capability at approximately 10-15 Joule per square centimeter (J/cm2) and robust short circuit protection at 3-5 microseconds . The company's SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss. In addition, its SiC MOSFET and SiC SBD die can be paired together for use in modules.

Microsemi's new SiC MOSFETs and SBDs are ideal for a wide range of applications within the industrial and automotive markets, and its SiC MOSFETs can also be used in switch mode power supply and motor control applications within the medical, aerospace, defense and data center markets. Examples include hybrid electric vehicle (HEV)/EV charging, conductive/inductive onboard charging (OBC), DC-DC converters, EV powertrain/tractional control, switch mode power supply, photovoltaic (PV) inverters, motor control and actuation for aviation.

According to research and consulting firm, IndustryARC, wide bandgap semiconductor technologies, namely SiC-based devices, are likely to shift from development to commercial phase due to growth driven in power electronics applications to enhance power conversion efficiency and minimize power losses. The advancement in power conversion paves the way of SiC-based devices in EV charging, which helps lessen battery charging cycles as well reduce the high cost of battery packs. Integration of SiC devices in on-board charging and DC-to-DC power conversion systems enable higher switching frequency and lower losses. IndustryARC expects the SiC market in EV charging to witness a growth rate of approximately 33 percent until 2024.

Microsemi is well-positioned with these trends, with its SiC MOSFETs offering 10 times lower failure-in-time (FIT) rate than comparable Si IGBTs at rated voltages with regard to neutron susceptibility. Its SiC SBDs complement its SiC MOSFET robustness with UIS ratings 20 percent higher than competitor parts tested. The company's SiC products offer a number of other advantages, including improved system efficiency with 25-50 percent power output increases for the same physical dimensions, efficiency at higher switching frequencies over IGBTs, reduced system size and weight, operating stability over temperature (+175 degrees C) and significant cooling cost savings.

Demonstrations at APEC March 4-8 and Product Availability
Microsemi's next-generation 1200V, 40 Ohm SiC MOSFET, MSC040SMA120B, is sampling now, and its complementary SiC SBDs are available in full production. For more information, visit https://www.microsemi.com/product-directory/mosfet/3539-sic-mosfet or contact sales.support@microsemi.com. The devices and corresponding SiC gate driver solutions will be showcased at APEC 2018 in San Antonio, Texas March 4-8, 2018 in the Richardson RFPD booth, #1147.

About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www.microsemi.com.

Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to sampling availability of the first product in its next-generation 1200 V SiC MOSFETs, the 40 mOhm MSC040SMA120B, and the company announcing the release of its complementary 1200V SiC SBDs, further expanding Microsemi's growing SiC product portfolio and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs in implementing the company's acquisitions and divestitures strategy or integrating acquired companies, uncertainty as to the future profitability of acquired businesses and realization of accretion from acquisition transactions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.

SOURCE Microsemi Corporation

For further information: Beth P. Quezada, Director, Corporate Communications, 949-380-6102, press@microsemi.com

Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. The table below summarizes the advantages of SiC vs Si power discretes.


SiC vs. Si



Breakdown field (MV/cm)

10x Higher

Lower On-Resistance

Higher efficiency

Electron sat. velocity (cm/s)

2x Higher

Faster switching

Size Reduction

Bandgap energy (ev)

3x Higher

Higher junction temperature

Improved cooling

Thermal conductivity (W/m.K)

3x Higher

Higher power density

Higher current capabilities

Positive temperature coefficient


Self regulation

Easy paralleling

Temperature independent switching behavior


Stable high temperature performance

Lower losses

Almost no Reverse Recovery charge


Lower switching losses
Higher switching capabilities

Higher performance

Microsemi SiC MOSFET Advantages

  • Best in Class RDS(on) vs Temperature: leads to lower switching losses as well as stability over the complete operating temperature range.
  • Longest Short Circuit Withstand Rating: highest simple easy control circuit design